Complementary Photo‐Synapses Based on Light‐Stimulated Porphyrin‐Coated Silicon Nanowires Field‐Effect Transistors (LPSNFET). Issue 30 (29th June 2021)

• Record Type: Journal Article
• Authors: Li, Xiaokang; Yu, Bocheng; Wang, Bowen; Bi, Ran; Li, Haixia; Tu, Kun; Chen, Gong; Li, Zhihong; Huang, Ru; Li, Ming
• Is Part Of: Small. Volume 17:Issue 30(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-06-29
• Subjects: complementary photo‐synapses -- light‐stimulated synaptic devices -- neuromorphic computing -- porphyrin -- selective‐assembling -- silicon nanowires; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.202101434
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract: Neuromorphic computing has emerged as the high‐energy‐efficiency and intelligent solution for processing sensory data. As a potential alternative to neuromorphic computing, photo‐excited synaptic systems can integrate the functions of optoelectronic sensing and synaptic computing to realize the low‐power and high‐performance visual perception. However, one major challenge in high‐efficient photo‐excited synaptic system is to realize the complementarily enhanced and inhibited synaptic behaviors with small hardware cost as possible. Another challenge is to fabricate the photo‐synapse devices with complementary metal oxide semiconductor (CMOS)‐compatible process to achieve high enough integration density for practical application. Here, a CMOS‐compatible Light‐stimulated Porphyrin‐coated Silicon Nanowire Field Effect Transistor (LPSNFET) technology is proposed and developed to form the complementary photo‐synapses with only two CMOS‐like transistors. LPSNFET exhibits fivefold improvement in photo‐sensitivity compared to the bare silicon nanowire (SiNW) devices, and can still show obvious responses when incident illumination power is as low as 0.1 mW cm −2 . Moreover, it enables tunable dynamic synaptic plasticity and versatile synaptic functions. Especially, the complementarily enhanced and inhibited behaviors can be realized by modulating SiNW/porphyrin interface via simply changing the MOS type of LPSNFET, which acts like the photonic counterpart of CMOS technology to provide the basic brick for building complex neuromorphic circuits efficiently and economically. Finally, the CMOS process compatibility of LPSNFET provides potential application in future large scale in‐sensor computing. Abstract : A CMOS‐compatible L ight‐stimulated P orphyrin‐coated S ilicon N anowire F ield E ffect T ransistor (LPSNFET) is proposed and developed to form the complementary photo‐synapses with only two CMOS‐like transistors. LPSNFET exhibits fivefold improvement in photo‐sensitivity compared to the bare silicon nanowire devices. Complementarily behaviors can be realized by modulating SiNW/porphyrin interface, and the CMOS compatibility provides potential application in future large scale in‐sensor computing.