15‐3: Resistance Reduction of Mo Metallization by W Seed Layer. Issue 1 (25th September 2020)

• Record Type: Journal Article
• Authors: Köstenbauer, Harald; Schmidt, Hennrik; Lorenz, Dominik; Linke, Christian; Zhang, Ying; Dong, Chengyuan; Winkler, Joerg
• Is Part Of: Digest of technical papers. Volume 51:Issue 1(2020)
• Page Start: 200
• Page End: 203
• Publication Date: 2020-09-25
• Subjects: Molybdenum -- low resistivity -- gate metallization -- seed layer; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.13837
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : We show that the resistance of a Mo metallization can be reduced by 30% using a thin W seed layer below the Mo layer. The effect is explained by changes in film microstructure and is additive to improvements by increasing the substrate temperature. It is shown that these changes do not negatively affect process integration like dry etching.