Near‐Surface Defect Control by Vacancy Injecting/Out‐Diffusing Rapid Thermal Annealing. Issue 17 (5th August 2019)

• Record Type: Journal Article
• Authors: Müller, Timo; Gehmlich, Michael; Sattler, Andreas; Kissinger, Gudrun; Kot, Dawid; Daub, Erich; Miller, Alfred
• Other Names: Kissinger Gudrun guestEditor.; Kot Dawid guestEditor.; Richter Hans guestEditor.; Zöllner Marvin guestEditor.
• Is Part Of: Physica status solidi. Volume 216:Issue 17(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-08-05
• Subjects: bulk micro defects -- defect dissolution -- defect engineering -- rapid thermal annealing -- Si point defects; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201900325
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Rapid thermal annealing (RTA) can be applied to dissolve small defects such as voids or small‐sized oxygen precipitates and to manipulate vacancies in a specific depth from the surface. This can be achieved at elevated temperatures around 1300 °C and via NH3 dissociation at the surface at temperatures >1150 °C. In an earlier study (Araki et al., 2013), it had been demonstrated already that even under oxidizing ambient, enhanced bulk micro defects formation around 1300–1350 °C can occur. The near‐surface region is monitored via its homogeneity of precipitation and in‐depth vacancy profiling by Pt‐diffusion. Simulations of defect dissolution during RTA processes are performed up to 1290 °C under different ambient. The size‐dependent defect dissolution behavior is predicted and verified by measurement of the gate oxide integrity. Abstract : A simulation model for dissolution of octahedral bulk micro defects (BMD) in pure argon or oxidizing ambient is developed. The model is capable of predicting under which rapid thermal annealing (RTA) conditions the BMD nuclei dissolution occurs. In addition, the impact of the RTA process sequence on the homogeneity of the BMD‐denuded zone is evaluated.