Double Nanowires for Hybrid Quantum Devices. (21st November 2021) - Kanne, Thomas
Abstract: Parallel 1D semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely, for example, on Andreev processes or topological effects. In order to realize these proposals, the actual material systems must have high crystalline purity, and the coupling between the different elements should be controllable in terms of their interfaces and geometry. A strategy for synthesizing double InAs nanowires by the vapor‐liquid‐solid mechanism using III‐V molecular beam epitaxy is presented. A superconducting layer is deposited onto nanowires without breaking the vacuum, ensuring pristine interfaces between the superconductor and the two semiconductor nanowires. The method allows for a high yield of merged as well as separate parallel nanowires with full or half‐shell superconductor coatings. Their utility in complex quantum devices by electron transport measurements is demonstrated. Abstract : Parallel 1D semiconductor channels connected by a superconducting strip are the core materials platform in recent theoretical proposals for exotic quantum states. In order to realize such device geometries, pairs of nanowires are grown in proximity and merged in situ by a common superconducting film. The applicability is demonstrated by implementing the double nanowires in quantum transport devices.