Mechanically Durable Memristor Arrays Based on a Discrete Structure Design. Issue 4 (6th December 2021)

• Record Type: Journal Article
• Authors: Wang, Ting; Cui, Zequn; Liu, Yaqing; Lu, Dingjie; Wang, Ming; Wan, Changjin; Leow, Wan Ru; Wang, Changxian; Pan, Liang; Cao, Xun; Huang, Yizhong; Liu, Zhuangjian; Tok, Alfred Iing Yoong; Chen, Xiaodong
• Is Part Of: Advanced materials. Volume 34:Issue 4(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-12-06
• Subjects: discrete structure -- mechanical damage endurance -- memristors -- stretchable devices; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.202106212
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: Memristors constitute a promising functional component for information storage and in‐memory computing in flexible and stretchable electronics including wearable devices, prosthetics, and soft robotics. Despite tremendous efforts made to adapt conventional rigid memristors to flexible and stretchable scenarios, stretchable and mechanical‐damage‐endurable memristors, which are critical for maintaining reliable functions under unexpected mechanical attack, have never been achieved. Here, the development of stretchable memristors with mechanical damage endurance based on a discrete structure design is reported. The memristors possess large stretchability (40%) and excellent deformability (half‐fold), and retain stable performances under dynamic stretching and releasing. It is shown that the memristors maintain reliable functions and preserve information after extreme mechanical damage, including puncture (up to 100 times) and serious tearing situations (fully diagonally cut). The structural strategy offers new opportunities for next‐generation stretchable memristors with mechanical damage endurance, which is vital to achieve reliable functions for flexible and stretchable electronics even in extreme and highly dynamic environments. Abstract : A stretchable memristor with mechanical damage endurance is developed based on a discrete structure design. The discrete‐structure‐based memristor exhibits large stretchability (≈40%) and stable performance under various mechanical deformations. Moreover, the device possesses excellent tolerance against adverse mechanical damage, including puncture and tearing, while retaining reliable functions.