SRAM design leveraging material properties of exploratory transistors. (2022)

• Record Type: Journal Article
• Authors: Gopinath, Anoop; Cochran, Zachary; Ytterdal, Trond; Rizkalla, Maher
• Is Part Of: Materials today. Volume 57:Part 2(2022)
• Page Start: 368
• Page End: 374
• Publication Date: 2022
• Subjects: CNFET -- GNRFET -- FinFET -- TFET -- SRAM -- Exploratory devices -- Characterization; Materials science -- Congresses -- Periodicals; 620.1
• DOI: 10.1016/j.matpr.2021.10.327
• Languages: English
• ISSNs: 2214-7853

Abstract

Abstract: While MOSFET miniaturization continues to face increased challenges related to process variations, supply voltage scaling and leakage currents, exploratory devices such as Graphene Nanoribbon Field Effect Transistors (GNRFET), Tunnel Field Effect Transistor (TFET), and Carbon Nanotube Field Effects Transistors (CNFET) could provide solutions for continued device scaling with better power/performance trade-offs. The GaN TFET used in this work is a heterojunction device, where the material properties of Ga and N result in a bandgap of 3.2eV and ultra-low IOFF current. Moreover, the properties of Ga and N result in a steep-switching device with a subthreshold swing of 30mV/decade. The structure of graphene material results in high conductivity of electrons, even at very high operating temperatures, making GNRFETs a high-performance device. However, graphene specific line-edge roughness can degrade performance, and thus process related variations can have a negative impact for GNRFETs. In CNFETs, the mobility and the velocity of the conducting carriers are functions of the carbon nanotube and the gate length. The length and the diameter of the carbon nanotube material adds parasitic capacitance and resistance to the model, contributing to slower speed of the device. In this paper, the impact on power, performance, and static noise margins (SNM) of the traditional single-port 6T-SRAM and modified single-port 8T-SRAMs designed using exploratory devices are analyzed with a set figure of merit (FOM), elucidating the material properties of the devices. The results obtained from this work show that GNRFET-based SRAM have very high performance with a worst-case memory access time of 27.7 ps for a 16x4-bit 4-word array while CNFET-based SRAM bitcell consume the lowest average power during read/write simulations at 3.84 µW, while TFET- based SRAM bitcell show the best overall average and static power consumption at 4.79 µW and 57.8 pW. A comparison of these exploratory devices with FinFET and planar CMOS showed that FinFET-based SRAM bitcell consumed the lowest static power at 39.8 pW and CMOS-based SRAM had the best read, write, and hold SNMs of 201 mV, 438 mV and 413 mV respectively.