Enhanced asymmetric DDSCR with high robustness for high-voltage ESD protection. Issue 4 (2nd October 2022)

• Record Type: Journal Article
• Authors: Wang, Yang; Li, Jieyu; Wei, Weipeng; Cao, Pei; Cao, Wenmiao
• Is Part Of: International journal of electronics letters. Volume 10:Issue 4(2022)
• Page Start: 428
• Page End: 435
• Publication Date: 2022-10-02
• Subjects: Word -- DDSCR -- failure current -- low on-resistance; Electronics -- Periodicals; Electronics; Periodicals; 621.38105
• DOI: 10.1080/21681724.2021.1969435
• Languages: English
• ISSNs: 2168-1732

Abstract

ABSTRACT: This paper proposes an enhanced asymmetric dual directional silicon controlled rectifier (EADDSCR) for the applications of bidirectional electrostatic discharge (ESD) protection. The ADDSCR and EADDSCR were prepared in a 0.18 µm Bipolar CMOS DMOS (BCD) process and measured with the transmission line pulsing tester. By adding N+ injection regions in the cathode and anode, a new vertical SCR path is formed in EADDSCR, so that the failure current of EADDSCR can reach twice as much as that of ADDSCR with only a small increase in the area of EADDSCR. Moreover, the FoM of EADDSCR can be increased to more than 81.19 µA/µm. Finally, the improved device possesses a smaller on resistance and is more suitable for high-voltage circuit applications.