Carrier recombination suppression and transport enhancement enable high‐performance self‐powered broadband Sb2Se3 photodetectors. Issue 4 (6th February 2023)

• Record Type: Journal Article
• Authors: Chen, Shuo; Fu, Yi; Ishaq, Muhammad; Li, Chuanhao; Ren, Donglou; Su, Zhenghua; Qiao, Xvsheng; Fan, Ping; Liang, Guangxing; Tang, Jiang
• Is Part Of: InfoMat. Volume 5:Issue 4(2023)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2023-02-06
• Subjects: photoresponse -- recombination suppression -- Sb2Se3 -- self‐powered photodetector -- transport enhancement; Materials -- Periodicals; Information technology -- Periodicals; Smart materials -- Periodicals; 620.11
• DOI: 10.1002/inf2.12400
• Languages: English
• ISSNs: 2567-3165

Abstract

Abstract: Antimony selenide (Sb2 Se3 ) is a promising candidate for photodetector applications boasting unique material benefits and remarkable optoelectronic properties. Achieving high‐performance self‐powered Sb2 Se3 photodetector through a synergistic regulation of absorber layer and heterojunction interface demonstrates great potential and needs essential investigation. In this study, an effective two‐step thermodynamic/kinetic deposition technique containing sputtered and selenized Sb precursor is implemented to induce self‐assembled growth of Sb2 Se3 light absorbing thin film with large crystal grains and desirable [hk1] orientation, presenting considerable thin‐film photodetector performance. Furthermore, aluminum (Al 3+ ) cation dopant is introduced to modify the optoelectronic properties of CdS buffer layer, and further optimize the Sb2 Se3 /CdS (Al) heterojunction interface quality. Thanks to the suppressed carrier recombination and enhanced carrier transport kinetics, the champion Mo/Sb2 Se3 /CdS (Al)/ITO/Ag photodetector exhibits self‐powered and broadband characteristics, accompanied by simultaneously high responsivity of 0.9 A W −1 (at 11 nW cm −2 ), linear dynamic range of 120 dB, impressive ON/OFF switching ratio over 10 6 and signal‐to‐noise ratio of 10 9, record total noise determined realistic detectivity of 4.78 × 10 12 Jones, and ultra‐fast response speed with rise/decay time of 24/75 ns, representing the top level for Sb2 Se3 ‐based photodetectors. This intriguing work opens up an avenue for its self‐powered broadband photodetector applications. Abstract : The thermodynamic/kinetic controlled self‐assembled growth of high‐quality Sb2 Se3, accompanied with Al 3+ cation doping in CdS induced heterojunction interface optimization can remarkably suppress carrier recombination and enhance carrier transport. Consequently, the champion Sb2 Se3 /CdS (Al) photodetector exhibits self‐powered broadband characteristics, accompanied by simultaneously high responsivity (0.9 A W −1 ), record detectivity (4.78 × 10 12 Jones), and ultra‐fast response speed (rise/decay time of 24/75 ns).