2D Bi2O2Te Semiconductor with Single‐Crystal Native Oxide Layer. (9th February 2023)

• Record Type: Journal Article
• Authors: Zou, Xiaobin; Liang, Haikuan; Li, Yan; Zou, Yichao; Tian, Fei; Sun, Yong; Wang, Chengxin
• Is Part Of: Advanced functional materials. Volume 33:Number 18(2023)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2023-02-09
• Subjects: 2D semiconductors -- Bi 2O 2Te -- chemical vapor deposition -- native oxides -- out‐of‐plane heterostructures; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.202213807
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract: Following logic in the silicon semiconductor industry, the existence of native oxide and suitable fabrication technology is essential for 2D semiconductors in planar integronics, which are surface‐sensitive to typical coating technologies. To date, very few types of integronics are found to possess this feature. Herein, the 2D Bi2 O2 Te developed recently is reported to possess large‐area synthesis and controllable thermal oxidation behavior toward single‐crystal native oxides. This shows that surface‐adsorbed oxygen atoms are inclined to penetrate across [Bi2 O2 ]n 2n+ layers and bond with the underlying [Te]n 2n− at elevated temperatures, transforming directly into [TeO4 ]n 2n− with the basic architecture remaining stable. The oxide can be adjusted to form in an accurate layer‐by‐layer manner with a low‐stress sharp interface. The native oxide Bi2 TeO6 layer (bandgap of ≈2.9 eV) exhibits visible‐light transparency and is compatible with wet‐chemical selective etching technology. These advances demonstrate the potential of Bi2 O2 Te in planar‐integrated functional nanoelectronics such as tunnel junction devices, field‐effect transistors, and memristors. Abstract : High‐quality Bi2 O2 Te nanosheets and continuous films are grown using low‐pressure chemical vapor deposition method. The construction of top single‐crystalline native oxide Bi2 TeO6 and bottom high‐mobility Bi2 O2 Te heterostructure is demonstrated via O intercalative oxidation at elevated temperatures in air, with an atomically sharp and low‐stress interface, indicating the potential of Bi2 O2 Te with native oxide in planar integrated functional nanoelectronics.