A high responsivity, high detectivity, and high response speed MSM UVB photodetector based on SnO2 microwires. Issue 16 (4th April 2023)

• Record Type: Journal Article
• Authors: Fu, Rongpeng; Jiang, Xue; Wang, Yuefei; Xia, Danyang; Li, Bingsheng; Ma, Jiangang; Xu, Haiyang; Shen, Aidong; Liu, Yichun
• Is Part Of: Nanoscale. Volume 15:Issue 16(2023)
• Page Start: 7460
• Page End: 7465
• Publication Date: 2023-04-04
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/d3nr00419h
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : We report a high performance UVB photodetector with a metal–semiconductor–metal device structure based on high crystal quality SnO2 microwires prepared by chemical vapor deposition. Abstract : We report a high performance UVB photodetector with a metal–semiconductor–metal device structure based on high crystal quality SnO2 microwires prepared by chemical vapor deposition. Under 10 V bias, a low dark current of 3.69 × 10 −9 A and a high light-to-dark current ratio of 1630 were achieved. The device showed a high responsivity of about 1353.0 A·W −1 under 322 nm light illumination. The detectivity of the device is as high as 5.4 × 10 14 Jones, which ensures the detection of weak signals in the UVB spectral region. Due to the small amount of deep-level defect-induced carrier recombination, the light response rise time and fall time are shorter than 0.08 s.