Substitutional p‐Type Doping in NbS2–MoS2 Lateral Heterostructures Grown by MOCVD. Issue 14 (28th February 2023)

• Record Type: Journal Article
• Authors: Wang, Zhenyu; Tripathi, Mukesh; Golsanamlou, Zahra; Kumari, Poonam; Lovarelli, Giuseppe; Mazziotti, Fabrizio; Logoteta, Demetrio; Fiori, Gianluca; Sementa, Luca; Marega, Guilherme Migliato; Ji, Hyun Goo; Zhao, Yanfei; Radenovic, Aleksandra; Iannaccone, Giuseppe; Fortunelli, Alessandro; Kis, Andras
• Is Part Of: Advanced materials. Volume 35:Issue 14(2023)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2023-02-28
• Subjects: metal–organic chemical vapor deposition (MOCVD) -- p‐type MoS 2 -- substitutional doping -- TMDC heterostructures; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.202209371
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: Monolayer MoS2 has attracted significant attention owing to its excellent performance as an n‐type semiconductor from the transition metal dichalcogenide (TMDC) family. It is however strongly desired to develop controllable synthesis methods for 2D p‐type MoS2, which is crucial for complementary logic applications but remains difficult. In this work, high‐quality NbS2 –MoS2 lateral heterostructures are synthesized by one‐step metal–organic chemical vapor deposition (MOCVD) together with monolayer MoS2 substitutionally doped by Nb, resulting in a p‐type doped behavior. The heterojunction shows a p‐type transfer characteristic with a high on/off current ratio of ≈10 4, exceeding previously reported values. The band structure through the NbS2 –MoS2 heterojunction is investigated by density functional theory (DFT) and quantum transport simulations. This work provides a scalable approach to synthesize substitutionally doped TMDC materials and provides an insight into the interface between 2D metals and semiconductors in lateral heterostructures, which is imperative for the development of next‐generation nanoelectronics and highly integrated devices. Abstract : p‐Type NbS2 –MoS2 lateral heterostructures with a high on/off current ratio are synthesized by a one‐step metal–organic chemical vapor deposition (MOCVD) method with Nb dopants present in the monolayer MoS2 . The heterostructure provides a platform to explore the instructive interface of substitutional doped TMDC materials and 2D metal–semiconductor heterojunctions, which paves a prospective way to designing innovative nanoscale devices and complementary metal–oxide–semiconductor (CMOS)‐like 2D circuits.