Advances in ultrashallow doping of silicon. Issue 1 (1st January 2021)

• Record Type: Journal Article
• Authors: Zhang, Chufan; Chang, Shannan; Dan, Yaping
• Is Part Of: Advances in physics: X. Volume 6:Issue 1(2021)
• Publication Date: 2021-01-01
• Subjects: Ultrashallow junctions -- molecular monolayer doping -- molecular beam epitaxy -- ion implantation -- sub-second thermal annealing; Physics -- Periodicals; 530.05
• DOI: 10.1080/23746149.2020.1871407
• Languages: English
• ISSNs: 2374-6149

Abstract

ABSTRACT: Ultrashallow doping is required for both classical field-effect transistors in integrated circuits and revolutionary quantum devices in quantum computing. In this review, we give a brief overview on recent research advances in three technologies to form ultrashallow doping, namely molecular monolayer doping, molecular beam epitaxy, and low energy ion implantation. A research perspective will be provided at the end of this review. GRAPHICAL ABSTRACT: uf0001