Recent Advances in Ferroelectric‐Enhanced Low‐Dimensional Optoelectronic Devices. Issue 16 (12th January 2023)

• Record Type: Journal Article
• Authors: Iqbal, Muhammad Ahsan; Xie, Haowei; Qi, Lu; Jiang, Wei‐Chao; Zeng, Yu‐Jia
• Is Part Of: Small. Volume 19:Issue 16(2023)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2023-01-12
• Subjects: ferroelectric materials -- low‐dimensional materials -- nonvolatile memories -- photodetectors; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.202205347
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract: Ferroelectric (FE) materials, including BiFeO3, P(VDF‐TrFE), and CuInP2 S6, are a type of dielectric material with a unique, spontaneous electric polarization that can be reversed by applying an external electric field. The combination of FE and low‐dimensional materials produces synergies, sparking significant research interest in solar cells, photodetectors (PDs), nonvolatile memory, and so on. The fundamental aspects of FE materials, including the origin of FE polarization, extrinsic FE materials, and FE polarization quantification are first discussed. Next, the state‐of‐the‐art of FE‐based optoelectronic devices is focused. How FE materials affect the energy band of channel materials and how device structures influence PD performance are also summarized. Finally, the future directions of this rapidly growing field are discussed. Abstract : For the development of ferroelectric (FE)‐based optoelectronic devices, a better understanding of the fundamental properties of FE materials, quantification of FE polarization, and interface study of heterostructures between FE/low‐dimensional (LD) materials are of great importance. This review summarizes recent developments and challenges in FE‐enhanced LD optoelectronic devices.