Cite
HARVARD Citation
Navarro, C. et al. (2023). 3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology. Solid-state electronics. p. . [Online].
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Navarro, C. et al. (2023). 3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology. Solid-state electronics. p. . [Online].