Cite
HARVARD Citation
Deng, G. et al. (2023). A 100‐V trench power MOSFET with taper‐shielded gate and non‐uniform drift region doping profile. IET power electronics. 16 (6), pp. 928-936. [Online].
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Deng, G. et al. (2023). A 100‐V trench power MOSFET with taper‐shielded gate and non‐uniform drift region doping profile. IET power electronics. 16 (6), pp. 928-936. [Online].