Logic‐in‐Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double‐Gated Feedback Field‐Effect Transistors. (29th January 2023)

• Record Type: Journal Article
• Authors: Son, Jaemin; Shin, Yunwoo; Cho, Kyoungah; Kim, Sangsig
• Is Part Of: Advanced Electronic Materials. Volume 9:Number 4(2023)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2023-01-29
• Subjects: field‐effect transistor -- logic‐in‐memory -- multivalued logic -- positive feedback loop -- universal gate; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202201134
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: In this study, the logic‐in‐memory operations are demonstrated of ternary NAND and NOR logic gates consisting of double‐gated feedback field‐effect transistors. The component transistors reconfigure their operation modes into n‐ or p‐channel modes by adjusting the gate biases. The highly symmetrical operation between these operation modes with an excellent on‐current ratio of 1.03 enables three distinguishable and stable logic levels in the ternary logic gates. Moreover, the ternary logic gates maintain the three logic states for several tens to hundreds of seconds under zero‐bias condition. This study demonstrates that the ternary logic gates are promising candidates for next‐generation low‐power computing systems. Abstract : Herein, the ternary NAND/NOR logic gates merging the concepts of multivalued logic and logic‐in‐memory have been experimentally demonstrated. The proposed logic gates consisting of double‐gated feedback field‐effect transistors can be in ternary logic states and retain these states for several tens to hundreds of seconds under zero‐bias condition.