Unveiling Charge‐Transport Mechanisms in Electronic Devices Based on Defect‐Engineered MoS2 Covalent Networks (Adv. Mater. 15/2023). Issue 15 (13th April 2023)

• Record Type: Journal Article
• Authors: Ippolito, Stefano; Urban, Francesca; Zheng, Wenhao; Mazzarisi, Onofrio; Valentini, Cataldo; Kelly, Adam G.; Gali, Sai Manoj; Bonn, Mischa; Beljonne, David; Corberi, Federico; Coleman, Jonathan N.; Wang, Hai I.; Samorì, Paolo
• Is Part Of: Advanced materials. Volume 35:Issue 15(2023)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2023-04-13
• Subjects: charge‐transport properties -- covalent networks -- defect engineering -- electrical devices -- hopping mechanisms -- transition metal dichalcogenides; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.202370106
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Charge‐Transport Mechanisms A multiscale investigation of the charge‐transport mechanisms in covalently interconnected networks of MoS2 nanosheets is presented by Paolo Samorì and co‐workers in article number 2211157 . The chemical structure of the dithiolated bridging linker is critical, with π‐conjugated systems outperforming aliphatic molecules thereby boosting interflake transport. These findings highlight the great potential of defect engineering for the fabrication of high‐performance MoS2 devices.