21‐3: Invited Paper: High Quality 8K4K Displays driven by Oxide Semiconductor Thin Film Transistor in the Generation 11 Equipment. Issue 1 (25th September 2020)

• Record Type: Journal Article
• Authors: Seo, Hyun-Sik; Cao, Weiran; Xiao, Jun Cheng; Wu, Yuan-Chun; Zhao, Bin; ZHANG, Xin; Yan, Xiaolin
• Is Part Of: Digest of technical papers. Volume 51:Issue 1(2020)
• Page Start: 301
• Page End: 304
• Publication Date: 2020-09-25
• Subjects: Oxide-Semiconductor TFTs -- BCE 4 Mask -- Self-Aligned Coplanar -- 8K4K -- AMLCD -- AMOLED; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.13863
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : We have been developing amorphous‐InGaZnO (a‐IGZO) thin film transistors (TFTs) in generation 11 equipment, which has the cost advantage for future premium displays compared to generation 8.5. One Gate One Data (1G1D) 8K4K 85 inch GOA LCD TV has been developed using 4 mask back channel etched (BCE) structure. A 32 inch UD ink jet printing (IJP) OLED TV, oriented to 65 inch 8K4K TVs, driven by self‐aligned coplanar structure TFTs has been demonstrated adopting TFTs with transparent storage and 3.8um contact hole design. InGaSnO (IGTO) TFTs with the mobility of ~ 30 cm 2 V ‐1 s ‐1 have been deveoped for future applications such as narrow bezel OLEDs and self‐luminous mini‐LEDs/micro LEDs with internal compensation circuit.