51‐3: Efficient InP/ZnS Quantum Dot Light‐emitting Diodes with Improved Electron Confinement. Issue 1 (25th September 2020)
- Record Type:
- Journal Article
- Title:
- 51‐3: Efficient InP/ZnS Quantum Dot Light‐emitting Diodes with Improved Electron Confinement. Issue 1 (25th September 2020)
- Main Title:
- 51‐3: Efficient InP/ZnS Quantum Dot Light‐emitting Diodes with Improved Electron Confinement
- Authors:
- Wu, Zhenghui
Zhang, Wenda
Liu, Pai
Wang, Kai
Sun, Xiao Wei - Abstract:
- Abstract : Highly delocalized electrons and parasitic emissions are serious problems in InP/ZnS quantum dot light emitting diodes. This work provided several approaches from the perspective of device design and physical mechanism to address the above problems. As a result, high efficiency InP/ZnS quantum dot light emitting diodes were achieved.
- Is Part Of:
- Digest of technical papers. Volume 51:Issue 1(2020)
- Journal:
- Digest of technical papers
- Issue:
- Volume 51:Issue 1(2020)
- Issue Display:
- Volume 51, Issue 1 (2020)
- Year:
- 2020
- Volume:
- 51
- Issue:
- 1
- Issue Sort Value:
- 2020-0051-0001-0000
- Page Start:
- 754
- Page End:
- 757
- Publication Date:
- 2020-09-25
- Subjects:
- Cadmium-free -- quantum dot light emitting diodes -- parasitic emission -- electron confinement -- InP quantum dots -- electron blocking
Information display systems -- Congresses
621.3815422 - Journal URLs:
- http://catalog.hathitrust.org/api/volumes/oclc/1799368.html ↗
http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2168-0159 ↗
http://ojps.aip.org/dbt/dbt.jsp?KEY=SIDSYM ↗
http://sid.aip.org/digest ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/sdtp.13978 ↗
- Languages:
- English
- ISSNs:
- 0097-966X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8271.680000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 26947.xml