P‐213: Late‐News‐Poster: Electroluminescence of Oxide Phosphor in Metal‐Oxide‐Semiconductor Structure. Issue 1 (25th September 2020)

• Record Type: Journal Article
• Authors: Kang, Taewook; Park, Jehong; Park, Boowon; Lim, Jimin; Kang, Hyunwoo; Jeong, Hyundon; Kim, Jongsu
• Is Part Of: Digest of technical papers. Volume 51:Issue 1(2020)
• Page Start: 1787
• Page End: 1789
• Publication Date: 2020-09-25
• Subjects: Zn2SiO4:Mn2+ phosphor -- electroluminescence -- MOS structure -- green emission; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.14250
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : The green Zn2 SiO4 :Mn 2+ phosphor film for electroluminescence (EL) was fabricated through a thermal annealing process of spin coated film on n‐type silicon wafer as a semiconductor electrode. The oxide phosphor was placed in metal‐oxide‐semiconductor (MOS) structure, where indium tin oxide was used as a top transparent electrode. The EL device showed the high‐purity green emission spectrum at 525 nm. Its luminance‐voltage and frequency dependence showed the increasing trend up to 100 V and 1 kHz.