31‐2: Invited Paper: Nanostructures Oxide Thin‐Film Transistors Fabricated by Near‐Field Nanolithography with Enhanced Device Performance. Issue 1 (25th September 2020)

• Record Type: Journal Article
• Authors: Huang, Kairong; Chen, Zihao; Hu, Sujuan; Gao, Lichao; Liu, Chuan
• Is Part Of: Digest of technical papers. Volume 51:Issue 1(2020)
• Page Start: 448
• Page End: 451
• Publication Date: 2020-09-25
• Subjects: Thin-Film Transistor -- oxide semiconductor -- nanostructured -- pattern method; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.13901
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : We have developed oxide TFTs with nanostructure by using a strategy based on near‐field nanolithography, such as wrapping insulator structure with nano‐splitting active layer or nanoscale and periodic degenerately doped heterostructures. These nanostructured TFTs enhanced in device performance, compared with normal single gate homogeneous IGZO TFTs.