P‐36: Highly Reliable a‐IGZO TFT Gate Driver Circuit to Prevent Leakage Path in Depletion Mode Operation. Issue 1 (25th September 2020)

• Record Type: Journal Article
• Authors: Lee, Jungwoo; Oh, Jongsu; Jung, Eun Kyo; Park, KeeChan; Lee, Soo-Yeon; Kim, Yong-Sang
• Is Part Of: Digest of technical papers. Volume 51:Issue 1(2020)
• Page Start: 1486
• Page End: 1489
• Publication Date: 2020-09-25
• Subjects: Gate Driver Circuit -- Oxide TFT -- Depletion Mode -- Leakage Current -- Duty Ratio -- Reliability; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.14168
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : This paper proposes new gate driver circuit to prevent VOUT ripple voltage by boosting‐down effect of pull‐up unit. Using only one pull‐down TFT with 50% turn‐on duty ratio, the proposed circuit can obtain high reliability for continuous bias stress and fully cut‐off ripple voltage by negative VGS for pull‐up TFT.