21‐1: Invited Paper: 5291‐ppi Microdisplay Using CAAC‐IGZO FET with Channel Length of 60 nm. Issue 1 (25th September 2020)

• Record Type: Journal Article
• Authors: Shishido, Hideaki; Katsui, Shuichi; Kobayashi, Hidetomo; Nakagawa, Takashi; Tamatsukuri, Yuki; Uesaka, Shogo; Nagata, Takaaki; Aoyama, Tomoya; Okazaki, Yutaka; Ikeda, Takayuki; Yamazaki, Shunpei
• Is Part Of: Digest of technical papers. Volume 51:Issue 1(2020)
• Page Start: 293
• Page End: 296
• Publication Date: 2020-09-25
• Subjects: CAAC-IGZO -- Microdisplay -- OLED -- High-definition; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.13861
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : For high‐definition microdisplays with more than several thousands of pixels per inch (ppi), c‐axis‐aligned crystal indium‐gallium‐zinc oxide (CAAC‐IGZO) field‐effect transistors (FETs) are effective devices. Based on such a viewpoint, we have fabricated a 5291‐ppi organic light‐emitting diode (OLED) display using CAAC‐IGZO FETs with a channel length of 60 nm.