7‐4: Late‐News‐Paper: Development of High‐mobility Top‐gate IGZTO‐TFT and Suppression of Threshold Voltage Shift in Short Channel Utilizing Laser Irradiation Process. Issue 1 (25th September 2020)

• Record Type: Journal Article
• Authors: Nakata, Mitsuru; Ochi, Mototaka; Takei, Tatsuya; Tsuji, Hiroshi; Miyakawa, Masashi; Nishiyama, Kohei; Nakajima, Yoshiki; Shimizu, Takahisa
• Is Part Of: Digest of technical papers. Volume 51:Issue 1(2020)
• Page Start: 79
• Page End: 82
• Publication Date: 2020-09-25
• Subjects: IGZTO -- high mobility -- self-aligned structure -- top-gate structure -- thin-film transistor; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.13809
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : Top‐gate self‐aligned thin‐film transistors (TFTs) with a high carrier mobility of 31 cm 2 /Vs were developed using the oxide semiconductor In‐Ga‐Zn‐Sn‐O. The threshold‐voltage shift in short‐channel top‐gate TFTs was suppressed by application of a laser irradiation process to reduce the resistance of the source/drain regions