69‐3: Examination of Degradation Analysis of p‐i‐n Type OLEDs Devices. Issue 1 (25th September 2020)

• Record Type: Journal Article
• Authors: Shirakura, Daichi; Okamura, Shinji; Taguchi, Yoshihiko; Takano, Hikaru; Shibamori, Takahiro; Miyamoto, Takashi; Sameshima, Junichiro
• Is Part Of: Digest of technical papers. Volume 51:Issue 1(2020)
• Page Start: 1033
• Page End: 1035
• Publication Date: 2020-09-25
• Subjects: p-i-n type OLED -- degradation analysis -- photoluminescence -- laser desorption ionization-mass spectrometry -- time of flight-secondary ion mass spectrometry; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.14049
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : Degradation analysis was conducted to p‐i‐n type OLED devices. PL, LDI‐MS, and GCIB‐TOF‐SIMS revealed the degraded layer was EML and molecular formula of the degradation product. GCIB‐TOF‐SIMS clarified the change of n‐dopant with the degradation.