Gain of TlBr/BrCl Quantum Dot Semiconductor Optical Amplifier. (17th March 2023)

• Record Type: Journal Article
• Authors: Al-Nashy, Baqer O.; Al-Mosawi, Buraq T. Sh.; Oleiwi, Mushtaq Obaid; Al-Khursan, Amin H.
• Other Names: Ramash Kumar K. Academic Editor.
• Is Part Of: Journal of electrical and computer engineering. Volume 2023(2023)
• Publication Date: 2023-03-17
• Subjects: Computer engineering -- Periodicals; Electrical engineering -- Periodicals; 621.3905
• DOI: 10.1155/2023/1941232
• Languages: English
• ISSNs: 2090-0147

Abstract

Abstract : This work studies the thallium halogenide TlBr/BrCl quantum dot (QD) semiconductor structure and specifies its optical properties. This QD structure is poorly studied. High gain is obtained, with two peaks at 800 and 3000 n m . Doping is shown to increase the gain by one order. Then, TlBr QD semiconductor optical amplifier (SOA) characteristics are studied. High dB gain is shown mainly at the doped structure, which can be used in various inline applications.