The Carrier Transport Properties of B-Doped Si Nanocrystal Films with Various Doping Concentrations. (18th August 2020)

• Record Type: Journal Article
• Authors: Shan, Dan; Cao, Yunqing; Yang, Ruihong; Wang, Hongyu; Tao, Tao
• Other Names: Munroe Paul Academic Editor.
• Is Part Of: Journal of nanomaterials. Volume 2020(2020)
• Publication Date: 2020-08-18
• Subjects: Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Nanomatériaux; Nanostructured materials; Nanotechnology; Nanostructures; Nanotechnology; Periodicals; Fulltext; Internet Resources; Periodicals; 620.115
• DOI: 10.1155/2020/3698543
• Languages: English
• ISSNs: 1687-4110

Abstract

Abstract : B-doped hydrogenated amorphous silicon ( a -Si:H) films with various doping concentrations were prepared by a plasma-enhanced chemical vapor deposition (PECVD) technique. After thermal annealing, the as-deposited samples, B-doped silicon nanocrystals (Si NCs), were obtained in the films. The electronic properties of B-doped Si NC films with various doping concentrations combined with the microstructural characterization were investigated. A significant improvement of Hall mobility rising to the maximum of 17.8 cm 2 /V·s was achieved in the Si NC film after B doping, which is due to the reduction of grain boundary (GB) scattering in the B-doped samples. With increasing the doping concentration, it was interesting to find that a metal-insulator transition (MIT) took place in the B-doped Si NC films with high doping concentrations. The different carrier transport properties in the B-doped Si NC films with various doping concentrations were investigated and further discussed with emphasis on the scattering mechanisms in the transport process.