Light‐Triggered and Polarity‐Switchable Homojunctions for Optoelectronic Logic Devices. Issue 7 (17th January 2023)

• Record Type: Journal Article
• Authors: Li, Kangjie; He, Ting; Guo, Nan; Xu, Tengfei; Fu, Xiao; Wang, Fang; Xu, Hangyu; Li, Guohua; Liu, Shuning; Deng, Ke; Xiao, Yunlong; Miao, Jinshui; Hu, Weida
• Is Part Of: Advanced optical materials. Volume 11:Issue 7(2023)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2023-01-17
• Subjects: CuInP 2S 6 -- homojunctions -- light trigger -- MoTe 2 -- optoelectronic logic devices; Optical materials -- Periodicals; Photonics -- Periodicals; 620.11295
• DOI: 10.1002/adom.202202379
• Languages: English
• ISSNs: 2195-1071

Abstract

Abstract: Semiconductor homojunctions based on 2D materials are promising candidates for optoelectronic logic devices due to their excellent electrostatic tunability and photoelectric characteristic. However, to reach programmable logic functions, the 2D homojunctions usually suffer from compulsory combinations of electrical and optical inputs. Here, a light‐triggered and polarity‐switchable homojunction made from the vertically stacked MoTe2 /CuInP2 S6 /Au layers in a dual‐floating gate transistor configuration, is demonstrated. Utilizing the band alignment between MoTe2 and CuInP2 S6, the photocarriers in MoTe2 can be excited to Au layer across the insulating CuInP2 S6 efficiently, serving as floating gate to modulate the polarity of the MoTe2 homojunctions which produce photocurrents simultaneously in photovoltaic mode. A logic gate XOR is achieved in one single device without the need for any applied voltage. Moreover, the devices exhibit both anomalous photoresponse and optical memory behaviors in photoconductive mode. The results provide a potential route for the development of optoelectronic logic devices with fully light‐actuated sensing capability. Abstract : A concept of light‐triggered and polarity‐switchable homojunction is proposed to achieve optoelectronic logic devices without any assistance of voltage. The junction formation and signal acquisition are simultaneously stimulated by light in photovoltaic mode. In addition, the devices exhibit both anomalous photoresponse and optical memory behaviors in photoconductive mode.