Structural and magnetic properties of Y3(GaAlFe)5O12 liquid‐phase epitaxy films with low ferromagnetic resonance losses. Issue 2 (15th March 2023)

• Record Type: Journal Article
• Authors: Zhang, Yuanjing; Yang, Qinghui; Liu, Yingli; Hu, Aimin; Zhang, Ding; Li, Han; Yu, Jingyan; Huang, Jiantao; Lu, Yongcheng; Zhang, Lei; Xue, Qiang; Li, Yilei; Jin, Lichuan; Wen, Qiye; Zhang, Huaiwu
• Is Part Of: Acta crystallographica. Volume 79:Issue 2(2023)
• Page Start: 157
• Page End: 163
• Publication Date: 2023-03-15
• Subjects: liquid‐phase epitaxy -- lattice mismatch -- saturation magnetization -- FMR line width
• DOI: 10.1107/S2052520623000483
• Languages: English
• ISSNs: 2052-5206

Abstract

Abstract : Y3 (GaAlFe)5 O12 monocrystalline garnet films (200 nm thick) with low saturation magnetization have been prepared on gadolinium gallium garnet substrates by liquid‐phase epitaxy. As the growth temperature was changed, the stress state and elemental composition of the films were analyzed and calculated. Abstract : Ultra‐thin rare earth iron garnet (RIG) films with a narrow ferromagnetic resonance (FMR) line width and a low damping factor have attracted a great deal of attention for microwave and spintronic applications. In this work, 200 nm Y3 (GaAlFe)5 O12 garnet (GaAl‐YIG) films were prepared on gadolinium gallium garnet (GGG) substrates by liquid‐phase epitaxy (LPE) with low saturation magnetization. The microstructural properties, chemical composition, and magnetostatic and dynamic magnetization characteristics of the films are discussed in detail. According to the structural analysis, these films exhibit a low surface roughness of less than 0.5 nm. The GaAl‐YIG films show an obvious temperature dependence of lattice parameter and strain state, and the film's parameter is perfectly matched with that of the GGG substrate at 810°C. There is a clear variation in the Pb level, which brings about a gradual enhancement of the coercivity and a diminution of the squareness ratio of magnetic hysteresis loops as the growth temperature is reduced. Slight changes in surface roughness, strain condition and content of Pb induce the FMR line width and damping factor to vary on a small scale. The line width is less than 10.17 Oe at 12 GHz and the damping factor is of the order of 10 −4 . All these properties demonstrate that these ultra‐thin GaAl‐YIG films are of benefit for the development of devices operated at lower frequencies and in lower fields.