Magnetic Field Effect in Hydrogen‐Bonded Semiconductor‐Based Organic Field‐Effect Transistors. Issue 7 (4th March 2023)

• Record Type: Journal Article
• Authors: Saadi, Donia; Yumusak, Cigdem; Zrinski, Ivana; Mardare, Andrei Ionut; Romdhane, Samir; Sariciftci, Niyazi Serdar; Irimia-Vladu, Mihai; Scharber, Markus Clark
• Is Part Of: Physica status solidi. Volume 220:Issue 7(2023)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2023-03-04
• Subjects: field-effect transistors -- magnetic field -- organic semiconductors; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202200821
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Herein, the magnetic field effect on the source–drain current of organic field‐effect transistors with semiconductor layers made of H‐bonded pigments is studied. In all devices, an external magnetic field reduces the source–drain current in the transistor. The magnetic field effect is independent of the direction of the applied magnetic field. The observed increase of the magnetoresistance seems to originate from the used semiconductor or the semiconductor–dielectric interface and is not influenced by the nature of the gate electrodes or the semiconductors' deposition procedure (e.g., grain size, layer thicknesses, etc.). As all prepared devices do have single charge carrier nature, the formation of bipolarons is suggested to be responsible for the observed magnetic field effect. The presented experiments demonstrate that hydrogen‐bonded semiconductors behave no different than their classical van der Waals‐bonded fully conjugated semiconductors' counterparts. Abstract : The magnetic field effect in hydrogen‐bonded semiconductor‐based organic field‐effect transistors is investigated.