High‐Performance Transparent Silicon Nanowire Thin Film Transistors Integrated on Glass Substrates via a Room Temperature Solution Passivation. (15th February 2023)

• Record Type: Journal Article
• Authors: Song, Xiaopan; Wu, Lei; Liang, Yifei; Liu, Zongguang; Wang, Junzhuan; Xu, Jun; Chen, Kunji; Yu, Linwei
• Is Part Of: Advanced Electronic Materials. Volume 9:Number 4(2023)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2023-02-15
• Subjects: low temperature passivation -- silicon nanowire -- thin film transistors -- transparent electronics; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202201236
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: Catalytic synthesized ultrathin silicon nanowires (SiNWs) are ideal 1D channel materials to fabricate high‐performance transparent and low‐cost thin film transistors (TFTs) that are widely needed for flexible electronics and displays. In this work, a scalable integration of orderly array of SiNW array, with a uniform diameter of only 52 ± 4 nm, grown directly upon glass/wafer substrates, via a guided in‐plane solid–liquid–solid (IPSLS) process, and passivated by a new solution oxidizing/etching cycling technique is demonstrated. This has enabled an all‐low‐temperature (<350 °C) fabrication of high‐performance SiNW‐TFTs, achieving I on / I off current ratio and subthreshold swing (SS) of >10 6 and 120 mV dec −1 respectively, with excellent negative and positive bias stabilities. Importantly, the SiNW‐TFTs fabricated on glasses with ITO/or metal electrodes demonstrate a high transparency of 90% or 73% respectively, making them ideal candidates for building the next generation of high aperture displays, transparent electronics, and augmented reality applications. Abstract : A room‐temperature solution oxidizing/etching cycling passivation technique has been developed for the fabrication of high‐performance silicon nanowire TFTs, directly integrated upon glass substrate, achieving I on / I off current ratio, subthreshold swing and high transparency of > 10 6, 120 mV dec −1 and 90% (ITO electrodes), respectively, making them ideal candidates for building the next generation of high aperture displays, transparent electronics, and augmented reality applications.