The impact of oxygen on Ga doped ZnO film. Issue 14 (23rd March 2023)
- Record Type:
- Journal Article
- Title:
- The impact of oxygen on Ga doped ZnO film. Issue 14 (23rd March 2023)
- Main Title:
- The impact of oxygen on Ga doped ZnO film
- Authors:
- Zhang, Yufeng
Zhao, Wenxiong
Wu, Qiuchen
Lin, Xinlu
Zhu, Ziyao
Li, Ruchun
Liu, Yuhang
Huang, Kai
Liu, Xiangxin - Abstract:
- Abstract : The UPS results indicated that although the electron affinity of ZnO could be effectively tuned by doping Ga, it remained quite stable for GZO under oxygen rich condition. Abstract : The Ga doped ZnO (GZO) film is one of the promising alternative films to replace ITO film, but its properties suffer from degradation when it is deposited under oxygen-rich conditions. This degradation has been investigated by depositing the films under different oxygen partial pressures. XRD results showed that all GZO films had wurtzite structure and the lattice parameter- c contracted when oxygen was introduced into the argon deposition atmosphere, but the parameter- c nearly remained constant when oxygen partial pressures were further increased. The contraction of parameter- c was caused by the increasing concentrations of VZn (Zn vacancy). It was the first time to observe that the impurity phase of Ga2 Zn6 O9 appeared and disappeared in GZO films during the increase of oxygen partial pressures. Analogously, conductivity decayed and optical bandgap decreased abruptly as oxygen was introduced, which enhanced self-compensation of donors and acceptors. The energy band structures of GZO and ZnO films were determined by using UPS, and the results showed that oxygen had little effect on the electron affinity of the GZO film, but a significant difference in electron affinity between the ZnO and GZO films was observed. This result indicated that although the electron affinity of ZnO couldAbstract : The UPS results indicated that although the electron affinity of ZnO could be effectively tuned by doping Ga, it remained quite stable for GZO under oxygen rich condition. Abstract : The Ga doped ZnO (GZO) film is one of the promising alternative films to replace ITO film, but its properties suffer from degradation when it is deposited under oxygen-rich conditions. This degradation has been investigated by depositing the films under different oxygen partial pressures. XRD results showed that all GZO films had wurtzite structure and the lattice parameter- c contracted when oxygen was introduced into the argon deposition atmosphere, but the parameter- c nearly remained constant when oxygen partial pressures were further increased. The contraction of parameter- c was caused by the increasing concentrations of VZn (Zn vacancy). It was the first time to observe that the impurity phase of Ga2 Zn6 O9 appeared and disappeared in GZO films during the increase of oxygen partial pressures. Analogously, conductivity decayed and optical bandgap decreased abruptly as oxygen was introduced, which enhanced self-compensation of donors and acceptors. The energy band structures of GZO and ZnO films were determined by using UPS, and the results showed that oxygen had little effect on the electron affinity of the GZO film, but a significant difference in electron affinity between the ZnO and GZO films was observed. This result indicated that although the electron affinity of ZnO could be effectively tuned by doping with Ga, it remained quite stable for GZO under oxygen-rich conditions. … (more)
- Is Part Of:
- RSC advances. Volume 13:Issue 14(2023)
- Journal:
- RSC advances
- Issue:
- Volume 13:Issue 14(2023)
- Issue Display:
- Volume 13, Issue 14 (2023)
- Year:
- 2023
- Volume:
- 13
- Issue:
- 14
- Issue Sort Value:
- 2023-0013-0014-0000
- Page Start:
- 9503
- Page End:
- 9510
- Publication Date:
- 2023-03-23
- Subjects:
- Chemistry -- Periodicals
540.5 - Journal URLs:
- http://pubs.rsc.org/en/Journals/JournalIssues/RA ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/d2ra08263b ↗
- Languages:
- English
- ISSNs:
- 2046-2069
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8036.750300
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 26877.xml