Large Magnetoresistance in Scandium Nitride Magnetic Tunnel Junctions Using First Principles (Adv. Theory Simul. 11/2021). Issue 11 (8th November 2021)

• Record Type: Journal Article
• Authors: Karki, Suyogya; Rogers, Vivian; Jadaun, Priyamvada; Marshall, Daniel S.; Incorvia, Jean Anne C.
• Is Part Of: Advanced theory and simulations. Volume 4:Issue 11(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-11-08
• Subjects: Science -- Simulation methods -- Periodicals; Science -- Methodology -- Periodicals; Engineering -- Simulation methods -- Periodicals; Engineering -- Methodology -- Periodicals; 507.21
• DOI: 10.1002/adts.202170027
• Languages: English
• ISSNs: 2513-0390

Abstract

Abstract : Large Magnetoresistance in Scandium Nitride Magnetic Tunnel Junctions Theory and simulation are essential to discovering new materials for computing. In article number 2100309, Jean Anne Incorvia, Suyogya Karki, Vivian Rogers, and co‐workers identify scandium nitride as a tunnel barrier material and compare its properties to state‐of‐the‐art magnesium oxide. The results show a high magnetoresistance with low wavefunction decay rates, suggesting scandium nitride could be used for magnetic tunnel junction‐based spintronic devices.