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HARVARD Citation
Toprak, A. et al. (2023). Nonalloyed ohmic contact development with n+ InGaN regrowth method and analysis of its effect on AlGaN/GaN HEMT devices. Microelectronics journal. p. . [Online].
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Toprak, A. et al. (2023). Nonalloyed ohmic contact development with n+ InGaN regrowth method and analysis of its effect on AlGaN/GaN HEMT devices. Microelectronics journal. p. . [Online].