Cite
HARVARD Citation
Pantle, F. et al. (2023). Correction: Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates. Nanoscale advances. 5 (7), p. 2119. [Online].
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Pantle, F. et al. (2023). Correction: Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates. Nanoscale advances. 5 (7), p. 2119. [Online].