Femtojoule‐Power‐Consuming Synaptic Memtransistor Based on Mott Transition of Multiphasic Vanadium Oxides. (23rd July 2021)

• Record Type: Journal Article
• Authors: Iqbal, Shahid; Duy, Le Thai; Kang, Hyunwoo; Singh, Ranveer; Kumar, Mohit; Park, Jucheol; Seo, Hyungtak
• Is Part Of: Advanced functional materials. Volume 31:Number 46(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-07-23
• Subjects: fast switching -- interfacial Mott VSiOx channel -- memtransistor devices -- Mott transition -- synaptic functions -- volatile thin film transistors; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.202102567
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract: To realize the potential of Mott transition of multiphasic vanadium oxides (VO x ) for memory applications, the development of VO x memtransistors on SiO2 wafer is introduced. Through electrical characterizations, the volatile memory behaviors of the VO x memtransistors are observed in both two‐ and three‐terminal measurements. Their capacitive memory and resistive switching mechanisms are strongly related to the mixed VO x /SiO2 interface (called VSiO x ). VSiO x supports the Mott transition in VO x at low bias voltages (<0.5 V), leading to the low power consumption of the memtransistor. Moreover, the fast switching time (≈35 ns) and tunable memory retention with the synaptic functions (potentiation and depression) of the memtransistors (by using the gate and drain biases) are demonstrated. Overall, the findings open up major opportunities for constructing ultrafast and femto‐joule power‐consuming neuromorphic devices. Abstract : The development of highly stable Mott memtransistors based on a multiphasic vanadium oxide film is introduced. The ultrafast synaptic behavior and low energy consumption of the memtransistors are highlighted. Furthermore, the controllability of the memtransistors by a gate and/or drain biases is demonstrated to confirm the high potential of memtransistors for use in practical memory applications, including neuromorphic processing.