Selective Effects of the Host Matrix in Hydrogenated InGaAsN Alloys: Toward an Integrated Matrix/Defect Engineering Paradigm. (22nd October 2021)
- Record Type:
- Journal Article
- Title:
- Selective Effects of the Host Matrix in Hydrogenated InGaAsN Alloys: Toward an Integrated Matrix/Defect Engineering Paradigm. (22nd October 2021)
- Main Title:
- Selective Effects of the Host Matrix in Hydrogenated InGaAsN Alloys: Toward an Integrated Matrix/Defect Engineering Paradigm
- Authors:
- Filippone, Francesco
Younis, Saeed
Mattioli, Giuseppe
Felici, Marco
Blundo, Elena
Polimeni, Antonio
Pettinari, Giorgio
Giubertoni, Damiano
Sterzer, Eduard
Volz, Kerstin
Fekete, Dan
Kapon, Eli
Amore Bonapasta, Aldo - Abstract:
- Abstract: In dilute nitride In y Ga1− y As1− x N x alloys, a spatially controlled tuning of the energy gap can be realized by combining the introduction of N atoms—inducing a significant reduction of this parameter—with that of hydrogen atoms, which neutralize the effect of N. In these alloys, hydrogen forms N–H complexes in both Ga‐rich and In‐rich N environments. Here, photoluminescence measurements and thermal annealing treatments show that, surprisingly, N neutralization by H is significantly inhibited when the number of In‐N bonds increases. Density functional theory calculations account for this result and reveal an original, physical phenomenon: only in the In‐rich N environment, the In y Ga1− y As host matrix exerts a selective action on the N–H complexes by hindering the formation of the complexes more effective in the N passivation. This thoroughly overturns the usual perspective of defect‐engineering by proposing a novel paradigm where a major role pertains to the defect‐surrounding matrix. Abstract : A theoretical model explains some experimental results in hydrogenated InGaAsN alloys by revealing a novel phenomenon. The stiffness of the N local environment governs the preference for which hydrogen structures form, thus inducing an important limitation on the actual defects production as the alloy composition is changed. This leads to a new strategy for tuning defect structures with desired properties.
- Is Part Of:
- Advanced functional materials. Volume 32:Number 5(2022)
- Journal:
- Advanced functional materials
- Issue:
- Volume 32:Number 5(2022)
- Issue Display:
- Volume 32, Issue 5 (2022)
- Year:
- 2022
- Volume:
- 32
- Issue:
- 5
- Issue Sort Value:
- 2022-0032-0005-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2021-10-22
- Subjects:
- density functional theory -- hydrogen doping -- InGaAsN alloys
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1616-3028 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adfm.202108862 ↗
- Languages:
- English
- ISSNs:
- 1616-301X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.853900
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 26762.xml