Field‐Effect Chiral Anomaly Devices with Dirac Semimetal. (9th July 2021)
- Record Type:
- Journal Article
- Title:
- Field‐Effect Chiral Anomaly Devices with Dirac Semimetal. (9th July 2021)
- Main Title:
- Field‐Effect Chiral Anomaly Devices with Dirac Semimetal
- Authors:
- Chen, Jiewei
Zhang, Ting
Wang, Jingli
Zhang, Ning
Ji, Wei
Zhou, Shuyun
Chai, Yang - Abstract:
- Abstract: Charge‐based field‐effect transistors (FETs) greatly suffer from unavoidable carrier scattering and heat dissipation. Analogous to valley degree of freedom in semiconductors, chiral anomaly current in Weyl/Dirac semimetals is theoretically predicted to be nearly nondissipative over long distances, but still lacks experimental ways to efficiently control its transport. Here, field‐effect chirality devices are demonstrated with Dirac semimetal PtSe2, in which its Fermi level is close to the Dirac point in the conduction band owing to intrinsic defects. The chiral anomaly is further corroborated by the planar Hall effect and nonlocal valley transport measurement, which can also be effectively modulated by external fields, showing robust nonlocal valley transport with micrometer diffusion length. Similar to charge‐based FETs, the chiral conductivity in PtSe2 devices can be modulated by electrostatic gating with an ON/OFF ratio of more than 10 3 . Basic logic functions in the devices are also demonstrated with electric and magnetic fields as input signals. Abstract : Charge‐based transistors greatly suffer from unavoidable heat dissipation. Chiral anomaly current is topologically protected and dissipationless, which is promising for complementing modern electronics. Here, field‐effect chiral anomaly devices are demonstrated with Dirac semimetal, which show the analogue output and transfer curves with a more than 10 3 ON/OFF ratio. Essential logic functions are realizedAbstract: Charge‐based field‐effect transistors (FETs) greatly suffer from unavoidable carrier scattering and heat dissipation. Analogous to valley degree of freedom in semiconductors, chiral anomaly current in Weyl/Dirac semimetals is theoretically predicted to be nearly nondissipative over long distances, but still lacks experimental ways to efficiently control its transport. Here, field‐effect chirality devices are demonstrated with Dirac semimetal PtSe2, in which its Fermi level is close to the Dirac point in the conduction band owing to intrinsic defects. The chiral anomaly is further corroborated by the planar Hall effect and nonlocal valley transport measurement, which can also be effectively modulated by external fields, showing robust nonlocal valley transport with micrometer diffusion length. Similar to charge‐based FETs, the chiral conductivity in PtSe2 devices can be modulated by electrostatic gating with an ON/OFF ratio of more than 10 3 . Basic logic functions in the devices are also demonstrated with electric and magnetic fields as input signals. Abstract : Charge‐based transistors greatly suffer from unavoidable heat dissipation. Chiral anomaly current is topologically protected and dissipationless, which is promising for complementing modern electronics. Here, field‐effect chiral anomaly devices are demonstrated with Dirac semimetal, which show the analogue output and transfer curves with a more than 10 3 ON/OFF ratio. Essential logic functions are realized with electric and magnetic fields as input signals. … (more)
- Is Part Of:
- Advanced functional materials. Volume 31:Number 40(2021)
- Journal:
- Advanced functional materials
- Issue:
- Volume 31:Number 40(2021)
- Issue Display:
- Volume 31, Issue 40 (2021)
- Year:
- 2021
- Volume:
- 31
- Issue:
- 40
- Issue Sort Value:
- 2021-0031-0040-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2021-07-09
- Subjects:
- dissipationless transport -- field‐effect chirality devices -- logic functions
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1616-3028 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adfm.202104192 ↗
- Languages:
- English
- ISSNs:
- 1616-301X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.853900
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 26739.xml