Photovoltage‐Competing Dynamics in Photoelectrochemical Devices: Achieving Self‐Powered Spectrally Distinctive Photodetection. (22nd October 2021)
- Record Type:
- Journal Article
- Title:
- Photovoltage‐Competing Dynamics in Photoelectrochemical Devices: Achieving Self‐Powered Spectrally Distinctive Photodetection. (22nd October 2021)
- Main Title:
- Photovoltage‐Competing Dynamics in Photoelectrochemical Devices: Achieving Self‐Powered Spectrally Distinctive Photodetection
- Authors:
- Liu, Xin
Wang, Danhao
Kang, Yang
Fang, Shi
Yu, Huabin
Zhang, Haochen
Memon, Muhammad Hunain
He, Jr‐Hau
Ooi, Boon S.
Sun, Haiding
Long, Shibing - Abstract:
- Abstract: Multiple‐band and spectrally distinctive photodetection play critical roles in building next‐generation colorful imaging, spectroscopy, artificial vision, and optically controlled logic circuits of the future. Unfortunately, it remains challenging for conventional semiconductor photodetectors to distinguish different spectrum bands with photon energy above the bandgap of the material. Herein, for the first time, a photocurrent polarity‐switchable photoelectrochemical device composed of group III‐nitride semiconductors, demonstrating a positive photocurrent density of 10.54 µA cm −2 upon 254 nm illumination and a negative photocurrent density of −0.08 µA cm −2 under 365 nm illumination without external power supply, is constructed. Such bidirectional photocurrent behavior arises from the photovoltage‐competing dynamics across two photoelectrodes. Importantly, a significant boost of the photocurrent and corresponding responsivity under 365 nm illumination can be achieved after decorating the counter electrode of n‐type AlGaN nanowires with platinum (Pt) nanoparticles, which promote a more efficient redox reaction in the device. It is envisioned that the photocurrent polarity‐switch behavior offers new routes to build multiple‐band photodetection devices for complex light‐induced sensing systems, covering a wide spectrum band from deep ultraviolet to infrared, by simply engineering the bandgaps of semiconductors. Abstract : A new architecture of photoelectrochemicalAbstract: Multiple‐band and spectrally distinctive photodetection play critical roles in building next‐generation colorful imaging, spectroscopy, artificial vision, and optically controlled logic circuits of the future. Unfortunately, it remains challenging for conventional semiconductor photodetectors to distinguish different spectrum bands with photon energy above the bandgap of the material. Herein, for the first time, a photocurrent polarity‐switchable photoelectrochemical device composed of group III‐nitride semiconductors, demonstrating a positive photocurrent density of 10.54 µA cm −2 upon 254 nm illumination and a negative photocurrent density of −0.08 µA cm −2 under 365 nm illumination without external power supply, is constructed. Such bidirectional photocurrent behavior arises from the photovoltage‐competing dynamics across two photoelectrodes. Importantly, a significant boost of the photocurrent and corresponding responsivity under 365 nm illumination can be achieved after decorating the counter electrode of n‐type AlGaN nanowires with platinum (Pt) nanoparticles, which promote a more efficient redox reaction in the device. It is envisioned that the photocurrent polarity‐switch behavior offers new routes to build multiple‐band photodetection devices for complex light‐induced sensing systems, covering a wide spectrum band from deep ultraviolet to infrared, by simply engineering the bandgaps of semiconductors. Abstract : A new architecture of photoelectrochemical devices composed of semiconductor nanowires demonstrates photocurrent polarity‐switchable characteristics based on the photovoltage‐competing dynamics across two photoelectrodes, aiming for spectrally distinctive photodetection. Importantly, a remarkable boost of photocurrent and responsivity can be achieved after rational surface modification of the nanowire structures, offering an unprecedented opportunity to construct multifunctional photosensing systems of the future. … (more)
- Is Part Of:
- Advanced functional materials. Volume 32:Number 5(2022)
- Journal:
- Advanced functional materials
- Issue:
- Volume 32:Number 5(2022)
- Issue Display:
- Volume 32, Issue 5 (2022)
- Year:
- 2022
- Volume:
- 32
- Issue:
- 5
- Issue Sort Value:
- 2022-0032-0005-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2021-10-22
- Subjects:
- III‐nitride nanowires -- photocurrent polarity‐switchable -- photoelectrochemical devices -- self‐powered -- spectrally distinctive
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1616-3028 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adfm.202104515 ↗
- Languages:
- English
- ISSNs:
- 1616-301X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.853900
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 26762.xml