Inverted semitransparent perovskite nanocrystal light-emitting diodes with a conjugated polymer as an electron transport layer. Issue 12 (7th March 2023)

• Record Type: Journal Article
• Authors: Wan, Qun; Zhang, Qinggang; Guo, Jinlong; Liu, Mingming; Zhan, Wenji; Liao, Xinrong; Yuan, Changwei; He, Mengda; Zheng, Weilin; Zhang, Congyang; Kong, Long; Li, Liang
• Is Part Of: Nanoscale. Volume 15:Issue 12(2023)
• Page Start: 5720
• Page End: 5725
• Publication Date: 2023-03-07
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/d2nr06998a
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : Inverted perovskite nanocrystal light-emitting diodes with average 61% transmittance have been achieved with PFN as electron transport layer. Abstract : Perovskite nanocrystals have attracted much attention due to their unique optical and electronic properties. Much progress has also been made in the development of light-emitting diodes based on perovskite nanocrystals in the past years. However, compared with the widely reported opaque perovskite nanocrystal light-emitting diodes, semitransparent perovskite nanocrystal light-emitting diodes are rarely studied, which affects the potential application of perovskite nanocrystals in the translucent display field in the future. Here, poly[(9, 9-bis(3′-( N, N -dimethylamino)propyl)-2, 7-fluorene)-alt-2, 7-(9, 9-dioctylfluorene)] (PFN), a conjugated polymer, was used as an electron transport layer to fabricate the inverted opaque and semitransparent perovskite light-emitting diodes. The maximum external quantum efficiency and luminance were improved from 0.13% and 1041 cd m −2 to 2.07% and 12 540 cd m −2, respectively, through device optimization in opaque light-emitting diodes. The corresponding semitransparent device also demonstrated high transmittance (average 61% from 380 to 780 nm) and high brightness of 1619 and 1643 cd m −2 for the bottom and top sides, respectively.