Spin property improvement of boron vacancy defect in hexagonal boron nitride by thermal treatment. (1st March 2023)

• Record Type: Journal Article
• Authors: Suzuki, Tetta; Yamazaki, Yuichi; Taniguchi, Takashi; Watanabe, Kenji; Nishiya, Yusuke; Matsushita, Yu-ichiro; Harii, Kazuya; Masuyama, Yuta; Hijikata, Yasuto; Ohshima, Takeshi
• Is Part Of: Applied physics express. Volume 16:Number 3(2023)
• Publication Date: 2023-03-01
• Subjects: spin defect -- boron vacancy -- hBN -- quantum sensor -- ODMR -- high temperature irradiation -- annealing; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/acc442
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Negatively charged boron vacancy ( V B – ) in hexagonal boron nitride has attracted attention as a promising spin defect for quantum sensing applications. Hence, a fabrication method for generation of V B – with superior spin properties would be desirable. In this study, we demonstrated V B – formation by two thermal treatment methods. Both methods improve the signal-to-noise ratio of optically detected magnetic resonance signal by a factor of 4. Furthermore, a zero-field splitting parameter E which reflects crystal distortion after irradiation significantly reduces for irradiation above 650 °C. These findings indicate that thermal treatment is an effective method for a V B – based quantum sensor.