Impact of the mole fraction modulation on the RF/DC performance of GaAs1−xSbx FinFET. (14th September 2021)

• Record Type: Journal Article
• Authors: Dixit, Ankit; Samajdar, Dip Prakash; Bagga, Navjeet
• Is Part Of: International journal of numerical modelling. Volume 35:Number 2(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-09-14
• Subjects: FinFET -- GaAsSb -- gate capacitance -- mole fraction; Electric networks -- Mathematical models -- Periodicals; Electronics -- Mathematical models -- Periodicals; 621.3011
• DOI: 10.1002/jnm.2957
• Languages: English
• ISSNs: 0894-3370

Abstract

Abstract: The impact of mole fraction variation on the RF/DC performance of GaAs1− x Sb x ‐based FinFET has been examined in this study. Changing the Sb mole fraction has substantial effect on the electronic band parameters of GaAs, which directly affects the device performance. Electrical properties of the device including electron density and mobility fluctuation are investigated as a function of Sb mole fraction. Additionally, device DC performance parameters such as the I ON / I OFF ratio, threshold voltage, transconductance, and device node capacitance, such as C gg and C ds, are studied using a technology computer‐aided design (TCAD) simulator. The mole fraction dependence of the gate capacitance dictates the application of the proposed FinFET in the RF and high‐frequency domains. A detailed investigation of the figures of merits such as intrinsic gain, intrinsic delay, dynamic power dissipation, power delay product, energy dissipation, and unity gain bandwidth reveals that GaAsSb can be a potential material for realization of low‐power analog and digital circuits. The proper tuning of the mole fraction can help to optimize the device performance.