A Reconfigurable Optoelectronic Synaptic Transistor with Stable Zr‐CsPbI3 Nanocrystals for Visuomorphic Computing. Issue 12 (11th February 2023)

• Record Type: Journal Article
• Authors: Shao, He; Li, Yueqing; Yang, Wei; He, Xiang; Wang, Le; Fu, Jingwei; Fu, Mingyang; Ling, Haifeng; Gkoupidenis, Paschalis; Yan, Feng; Xie, Linghai; Huang, Wei
• Is Part Of: Advanced materials. Volume 35:Issue 12(2023)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2023-02-11
• Subjects: artificial retinas -- in‐sensor computing -- perovskite nanocrystals -- phototransistor memory -- reconfigurable electronics; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.202208497
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: Reconfigurable phototransistor memory attracts considerable attention for adaptive visuomorphic computing, with highly efficient sensing, memory, and processing functions integrated onto a single device. However, developing reconfigurable phototransistor memory remains a challenge due to the lack of an all‐optically controlled transition between short‐term plasticity (STP) and long‐term plasticity (LTP). Herein, an air‐stable Zr‐CsPbI3 perovskite nanocrystal (PNC)‐based phototransistor memory is designed, which is capable of broadband photoresponses. Benefitting from the different electron capture ability of Zr‐CsPbI3 PNCs to 650 and 405 nm light, an artificial synapse and non‐volatile memory can be created on‐demand and quickly reconfigured within a single device for specific purposes. Owing to the optically reconfigurable and wavelength‐aware operation between STP and LTP modes, the integrated blue feature extraction and target recognition can be demonstrated in a homogeneous neuromorphic vision sensor array. This work suggests a new way in developing perovskite optoelectronic transistors for highly efficient in‐sensor computing. Abstract : Wavelength‐aware transistor memory is designed by incorporating air‐stable Zr‐CsPbI3 perovskite nanocrystals. On‐demand creation of an artificial synapse and non‐volatile memory in such homogeneous phototransistor that can be quickly reconfigured for a specific purpose by adjusting the wavelength of the incident light is demonstrated.