Ni/Au contacts to corundum α-Ga2O3. (8th March 2023)

• Record Type: Journal Article
• Authors: Massabuau, Fabien C.-P.; Adams, Francesca; Nicol, David; Jarman, John C.; Frentrup, Martin; Roberts, Joseph W.; O'Hanlon, Thomas J.; Kovács, Andras; Chalker, Paul R.; Oliver, R. A.
• Is Part Of: Japanese journal of applied physics. Volume 62:Number SF(2023)
• Publication Date: 2023-03-08
• Subjects: Ga2O3 -- corundum -- metal contact -- Schottky -- transmission electron microscopy; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/acbc28
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The structural, chemical and electrical properties of Ni/Au contacts to the atomic layer deposited α -Ga2 O3 were investigated. Ni forms a Schottky contact with α -Ga2 O3, irrespectively of the post-annealing temperature. No sign of metal oxidation was observed at the metal-semiconductor interface (unlike what is observed for other metals like Ti), and instead, the metallurgical processes of the Ni–Au bilayer dominate the electrical properties. It is found that 400 °C–450 °C is the optimal annealing temperature, which allows for metal diffusion to heal gaps at the metal/semiconductor interface, but is not sufficient for Ni and Au to significantly interdiffuse and form an alloy with compositional inhomogeneities.