Atomistic simulations of thermal conductivity in novel GeC channel materials from first-principles molecular dynamics calculations. (10th March 2023)

• Record Type: Journal Article
• Authors: Lee, Shao-Chen; Chen, Yu-Ting; Liu, Cheng-Rui; Wang, Sheng-Min; Tang, Ying-Tsan
• Is Part Of: Japanese journal of applied physics. Volume 62:Number SC(2023)
• Publication Date: 2023-03-10
• Subjects: SiC -- GeC -- thermal conductivity -- atomistic simulations -- first-principles molecular dynamics calculations; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/acb94f
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Silicon carbide (SiC) has emerged as a candidate material for next-generation power devices to replace traditional silicon power devices. They feature smaller size, faster switching speed, simpler cooling, and greater reliability than Si-MOSFETs. To date, however, the thermal conductance of GeC-based power MOSFETs is unclear. This work explains the heat transfer of GeC by simulating the thermal conductivity through molecular dynamics (MD) and proposes a potential 4H-GeC power MOSFET with wide bandgap and high thermal conductivity to replace Si-MOSFETs.