Highly selective isotropic gas-phase etching of SiO2 using HF and methanol at temperatures –30 °C and lower. (1st July 2023)

• Record Type: Journal Article
• Authors: Hattori, T.; Kobayashi, H.; Ohtake, H.; Akinaga, K.; Kurosaki, Y.; Takei, A.; Sekiguchi, A.; Maeda, K.; Takubo, C.; Yamada, M.
• Is Part Of: Japanese journal of applied physics. Volume 62:Number SI(2023)
• Publication Date: 2023-07-01
• Subjects: gas-phase etching -- SiO2 -- low temperature -- hydrogen fluoride -- methanol -- selectivity; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/acb953
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The gas-phase etching of SiO2 was examined using HF and methanol vapor at temperatures below 0 °C and at low pressure. The etching rate of SiO2 increased with decreasing temperature and showed a maximum around –30 °C. The obtained etching rate was a maximum of 40 nm min −1 at plasma-enhanced chemical vapor deposition SiO2 . The etching rate of SiN examined for comparison was more than ten times smaller than that of SiO2 under the same condition. As a result, the etching selectivity of SiO2 to SiN was found to be over 20 at –40 °C. When utilizing a low temperature of less than –30 °C, gas-phase etching of SiO2 showing a high etching rate and selectivity was achieved.