Large critical field of Li-doped NiO investigated by p+-NiO/n+-Ga2O3 heterojunction diodes. (1st June 2023)

• Record Type: Journal Article
• Authors: Danno, Katsunori; Kado, Motohisa; Hara, Toshimasa; Takasugi, Tatsuki; Yamano, Hayate; Umetani, Yusuke; Shoji, Tetsuya
• Is Part Of: Japanese journal of applied physics. Volume 62:Number SF(2023)
• Publication Date: 2023-06-01
• Subjects: Ga2O3 -- NiO -- critical field -- heterojunction device; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/acb2d7
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Critical electric fields ( E C ) of lithium-doped p + -nickel oxide (NiO) were investigated by the capacitance ( C )–voltage ( V ) and current ( I )– V measurements using p + -NiO/n + -gallium oxide (Ga2 O3 ) heterojunction diodes. The E C was estimated by device simulations using the net acceptor concentrations ( N A ) obtained from C–V measurements and breakdown voltages obtained from reverse I–V characteristics. The E C of NiO depended on the N A of the NiO and ranged from 5.4 to 10.1 MV cm −1 . Large E C was obtained for high N A . NiO was confirmed to be one of the promising p-type oxides to realize high-power p-n heterojunction devices with Ga2 O3 due to the high E C .