Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates. (1st March 2023)

• Record Type: Journal Article
• Authors: Shimura, Takayoshi; Yamaguchi, Ryoga; Tabuchi, Naoto; Kondoh, Masato; Kuniyoshi, Mizuki; Hosoi, Takuji; Kobayashi, Takuma; Watanabe, Heiji
• Is Part Of: Japanese journal of applied physics. Volume 62:Number SC(2023)
• Publication Date: 2023-03-01
• Subjects: silicon photonics -- GeSn -- zone melting -- liquid phase crystallization; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/acb9a2
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We examined the effects of the laser scan speed and power on the Sn fraction and crystallinity of GeSn wires of 1 μ m width and 1 mm length fabricated by laser-induced local liquid phase crystallization on quartz substrates. The Sn fraction increased from 1% to 3.5% with an increasing scan speed from 5 to 100 μ m s −1, corresponding to a luminescence wavelength of 1770–2070 nm. This result can be interpreted as the scan speed dependence of the non-equilibrium degree during crystal growth. The increase in the laser power reduced the Sn fraction and caused a blue shift in the luminescence wavelength. We discuss these phenomena based on the growth kinetics of zone melting.