Effect of oxygen pressure on the structural and electrical properties of Bi2Mg2/3Nb4/3O7 thin films. (May 2023)

• Record Type: Journal Article
• Authors: Xiang, Zhiqiang; Dong, Helei; Li, Xiangpeng; Liu, Tao; Xiong, Jijun
• Is Part Of: Vacuum. Volume 211(2023)
• Publication Date: 2023-05
• Subjects: Bi2O3–MgO–Nb2O5 thin films -- Oxygen pressure -- Pulsed laser deposition -- Electrical properties -- XPS; Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2023.111928
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: Bismuth magnesium niobate (Bi2 Mg2/3 Nb4/3 O7, BMN) films were prepared on indium-doped tin oxide glass substrates via pulsed laser deposition. The effect of oxygen pressure on the structural and electrical properties of the BMN films are investigated. The prepared BMN film presents monoclinic phase, and the surface of the films have good compactness without cracks and pores. With the increase of oxygen pressure, the energy storage density and dielectric constant of the films decrease and subsequently increase, which is related to the influence on the structure and surface morphology of BMN films. The BMN films prepared at 10Pa have the best surface uniformity, with a dielectric constant of 138, a loss tangent of 0.0043, a tunability of 16%, and an energy storage density of 0.749J/cm 3 . Highlights: Increasing the oxygen pressure can improve surface and structure of the films, thereby improving electrical properties. The effect of oxygen pressure on the structure of the films was deeply analyzed by X-ray photoelectron spectroscopy. When the oxygen pressure reaches 4Pa, the structure of BMN films can be significantly changed. The film deposited at 10Pa has a high dielectric constant of 138.