Cite
HARVARD Citation
Guo, M. et al. (2023). Critical Assessment of the High Carrier Mobility of Bilayer In2O3/IGZO Transistors and the Underlying Mechanisms. Advanced Electronic Materials. p. n/a. [Online].
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Guo, M. et al. (2023). Critical Assessment of the High Carrier Mobility of Bilayer In2O3/IGZO Transistors and the Underlying Mechanisms. Advanced Electronic Materials. p. n/a. [Online].